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ly6125616 rev. 2.4 5v 256k x 16 bit high speed cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 0 ? revision history revision description issue date rev. 1.0 initial issue mar.23.2006 rev. 1.1 revised v il = 0.6v => 0.8v jun.9.2006 rev. 1.2 revised package outline dimension(tsop-ii) a pr.12.2007 rev. 2.0 a dded ll spec. revised test condition of i sb1 /i dr added -12ns spec. revised i cc and i sb1 added i grade revised absolute maximun ratings jun.25.2007 rev. 2.1 revised test condition of i cc revised features & ordering information lead free and green package available to green package available deleted t solder in absolute maximun ratings added packing type in ordering information a pr.17.2009 rev. 2.2 rev. 2.3 rev. 2.4 a dded package type tfbg a revised ordering information in page 12 revised -12ns spec as -10ns spec and related parameter may.6.2010 aug.30.2010 july.03.2013 revised ordering information in page 11
ly6125616 rev. 2.4 5v 256k x 16 bit high speed cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 1 ? features ? fast access time : 10/15/20/25ns ? low power consumption: operating current : 215/140/110/100ma(max.) standby current : 15ma(max. for 10ns) 3ma(max. for 15/20/25ns) 100 a( (max. for 15/20/25ns ll version) ? single 5v power supply ? all inputs and outputs ttl compatible ? fully static operation ? tri-state output ? data byte control : lb# (dq0 ~ dq7) ub# (dq8 ~ dq15) ? data retention voltage : 2.0v (min.) ? green package available ? package : 44-pin 400 mil tsop-ii 48-ball 6mm x 8mm tfbga general description the ly6125616 is a 4,194,304-bit low power cmos static random access memory organized as 262,144 words by 16 bits. it is fabricated using very high performance, high reliability cmos technology. its standby current is stable within the range of operating temperature. the ly6125616 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. the ly6125616 operates from a single power supply of 5v and all inputs and outputs are fully ttl compatible product family product family operating temperature vcc range speed power dissipation standby(i sb1 ) operating(icc) ly6125616 0 ~ 70 4.5 ~ 5.5v 10ns 15ma(max.) 215ma(max.) ly6125616(i) -40 ~ 85 4.5 ~ 5.5v 10ns 15ma(max.) 215ma(max.) ly6125616 0 ~ 70 4.5 ~ 5.5v 15/20/25ns 3ma(max.) 140/110/100ma(max.) ly6125616(e) -20 ~ 80 4.5 ~ 5.5v 15/20/25ns 3ma(max.) 140/110/100ma(max.) ly6125616(i) -40 ~ 85 4.5 ~ 5.5v 15/20/25ns 3ma(max.) 140/110/100ma(max.) ly6125616(ll) 0 ~ 70 4.5 ~ 5.5v 15/20/25ns 100a(m ax.) 140/110/100ma(max.) ly6125616(lli) -40 ~ 85 4.5 ~ 5.5v 15/20/25ns 100a(m ax.) 140/110/100ma(max.)
ly6125616 rev. 2.4 5v 256k x 16 bit high speed cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 2 ? functional block diagram control circuit ce# we# oe# decoder 256kx16 memory array column i/o a0-a17 vcc vss dq8-dq15 upper byte dq0-dq7 lower byte i/o data circuit lb# ub# pin description symbol description a0 - a17 address inputs dq0 ? dq15 data inputs/outputs ce# chip enable input we# write enable input oe# output enable input lb# lower byte control ub# upper byte control v cc power supply v ss ground
ly6125616 rev. 2.4 5v 256k x 16 bit high speed cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 3 ? pin configuration tfbga nc a3 a10 a9 a11 a0 a14 a8 nc we# dq9 dq14 dq15 nc vss nc a13 dq8 vcc vcc dq7 a15 vss ce# lb# dq6 dq2 dq0 a2 oe# a1 a6 a5 a4 ub# 123456 h g c d e f a b a12 nc a17 a7 a16 dq10 dq11 dq12 dq13 dq5 dq4 dq3 dq1
ly6125616 rev. 2.4 5v 256k x 16 bit high speed cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 4 ? absolute maximun ratings* parameter symbol rating unit voltage on v cc relative to v ss v t1 -0.5 to 6.5 v voltage on any other pin relative to v ss v t2 -0.5 to v cc +0.5 v operating temperature t a 0 to 70(c grade) -20 to 80(e grade) -40 to 85(i grade) storage temperature t stg -65 to 150 power dissipation p d 1 w dc output current i out 50 ma *stresses greater than those listed under ?absolute maximum ratings ? may cause permanent damage to the device. this is a stress rating only and functional operation of the device or any other conditions above t hose indicated in the operational sections of this s pecification is not implied. exposure to the absolute ma ximum rating conditions for extended per iod may affect device reliability. truth table mode ce# oe# we# lb# ub# i/o operation supply current dq0-dq7 dq8-dq15 standb y h x x x x high ? z high ? z i sb1 output disable l l h x h x x h x h high ? z high ? z high ? z high ? z i cc read l l l l l l h h h l h l h l l d out high ? z d out high ? z d out d out i cc write l l l x x x l l l l h l h l l d in high ? z d in high ? z d in d in i cc note: h = v ih , l = v il , x = don't care. dc electrical characteristics parameter symbol test condition min. typ. * 4 max. unit supply voltage v cc 4.5 5.0 5.5 v input high voltage v ih *1 2.2 - v cc +0.3 v input low voltage v il *2 - 0.3 - 0.8 v input leakage current i li v cc R v in R v ss - 1 - 1 a output leakage current i lo v cc R v out R v ss , output disabled - 1 - 1 a output high voltage v oh i oh = -4m a 2.4 - - v output low voltage v ol i ol = 8m a - - 0.4 v average operating power supply current i cc cycle time = min. ce# = v il , i i/o = 0ma others at v il or v ih 10 - - 215 m a 15 - 100 140 m a 20 - 80 110 m a 25 - 75 100 m a standby power supply current i sb1 ce# v R cc - 0.2v others at 0.2v / v cc -0.2 v 10 - - 15 m a 15/20/25 - 0.1 3* 5 m a 15/20/25ll - 20 100* 6 a notes: 1. v ih (max) = v cc + 2.0v for pulse width less than 6ns. 2. v il (min) = v ss - 2.0v for pulse width less than 6ns. 3. over/undershoot specifications ar e characterized on engineering evaluati on stage, not for mass production test. 4. typical values are included for reference only and are not guaranteed or tested. typical valued are measured at v cc = v cc (typ.) and t a = 25 5. 1ma for special request 6. 50 a for special request
ly6125616 rev. 2.4 5v 256k x 16 bit high speed cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 5 ? capacitance (t a = 25 , f = 1.0mhz) parameter symbol min. ma x unit input capacitance c in - 8pf input/output capacitance c i/o - 10 pf note : these parameters are guaranteed by devic e characterization, but not production tested. ac test conditions input pulse levels 0.2v to v cc -0.2v input rise and fall times 3ns input and output timing reference levels 1.5v output load c l = 30pf + 1ttl, i oh / i ol = -8ma/16m a ac electrical characteristics (1) read cycle parameter sym. ly6125616-10 ly6125616-15 ly6125616-20 ly6125616-25 unit min. max. min. max. min. max. min. max. read cycle time t rc 10 - 15 - 20 25 - ns a ddress access time t aa - 10 - 15 - 20 - 25 ns chip enable a ccess time t ace - 10 - 15 - 20 - 25 ns output enable access time t oe -5-7-8- 9 ns chip enable to output in low-z t clz * 2 - 4 - 4 4 - ns output enable to output in low-z t olz * 0 - 0 - 0 0 - ns chip disable to output in high-z t chz * -5-7-8- 9 ns output disable to output in high-z t ohz * -5-7-8- 9 ns output hold from address change t oh 3-3-3 3 - ns lb#, ub# access time t ba -5-7-8- 9 ns lb#, ub# to high-z output t bhz * -5-7-8- 9 ns lb#, ub# to low-z output t blz * 2 - 4 - 4 4 - ns (2) write cycle parameter sym. ly6125616-10 ly6125616-15 ly6125616-20 ly6125616-25 unit min. max. min. max. min. max. min. max. write cycle time t wc 10 - 15 - 20 - 25 - ns a ddress valid to end of write t aw 8 - 12 - 16 - 20 - ns chip enable to end of write t cw 8 - 12 - 16 - 20 - ns a ddress set-up time t as 0-0-0-0 - ns write pulse width t wp 8 - 10 - 11 - 12 - ns write recovery time t wr 0-0-0-0 - ns data to write time overlap t dw 6-8-9-10 - ns data hold from end of write time t dh 0-0-0-0 - ns output active from end of write t ow * 2-4-5-6 - ns write to output in high-z t whz * -6-8-9- 10 ns lb#, ub# valid to end of write t bw 8 - 12 - 16 - 20 - ns *these parameters are guaranteed by device characterization, but not production tested.
ly6125616 rev. 2.4 5v 256k x 16 bit high speed cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 6 ? timing waveforms read cycle 1 (address controlled) (1,2) dout data valid t oh t aa address t rc previous data valid read cycle 2 (ce# and oe# controlled) (1,3,4,5) dout data valid high-z high-z t clz t olz t chz t ohz t oh oe# t oe lb#,ub# t bhz t ace ce# t aa address t rc t ba t blz notes : 1.we#is high for read cycle. 2.device is continuously selected oe# = low, ce# = low, lb# or ub# = low . 3.address must be valid prior to or coincident with ce# = low, lb# or ub# = low transition; otherwise t aa is the limiting parameter. 4.t clz , t blz, t olz , t chz, t bhz and t ohz are specified with c l = 5pf. transition is measured 500mv from steady state. 5.at any given temperature and voltage condition, t chz is less than t clz , t bhz is less than t blz , t ohz is less than t olz.
ly6125616 rev. 2.4 5v 256k x 16 bit high speed cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 7 ? write cycle 1 (we# controlled) (1,2,3,5,6) dout din data valid t dw t dh (4) high-z t whz we# t wp t cw t wr t as (4) t ow lb#,ub# ce# t aw address t wc t bw write cycle 2 (ce# controlled) (1,2,5,6) dout din data valid t dw t dh (4) high-z t whz we# lb#,ub# t cw ce# address t wr t as t aw t wc t wp t bw
ly6125616 rev. 2.4 5v 256k x 16 bit high speed cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 8 ? write cycle 3 ( lb#,ub# controlled) (1,2,5,6) dout din data valid t dw t dh (4) high-z t whz we# lb#,ub# t cw ce# address t wr t as t aw t wc t wp t bw notes : 1.we#,ce#, lb#, ub# must be high during all address transitions. 2.a write occurs during the overlap of a low ce#, low we#, lb# or ub# = low. 3.during a we# controlled write cycle with oe# low, t wp must be greater than t whz + t dw to allow the drivers to turn off and data to be placed on the bus. 4.during this period, i/o pins are in the out put state, and input signals must not be applied. 5.if the ce#, lb#, ub# low transition occurs simultaneously with or after we# low transition, the outputs remain in a high impe dance state. 6.t ow and t whz are specified with c l = 5pf. transition is measured 500mv from steady state. data retention characteristics parameter symbol test cond ition min. typ. max. unit v cc for data retention v dr ce# v R cc - 0.2v 2.0 - 5.5 v data retention current i dr v cc = 2.0v ce# v R cc - 0.2v other pins at 0.2v or v cc -0.2v 10 - - 10 m a 15/20/25 - 0.05 2 m a 15/20/25ll - 10 50 a chip disable to data retention time t cdr see data retention waveforms (below) 0 - - ns recovery time t r t rc * - - ns t rc * = read cycle time data retention waveform vcc ce# v dr R 2.0v ce# v R cc-0.2v vcc(min.) v ih t r t cdr v ih vcc(min.)
ly6125616 rev. 2.4 5v 256k x 16 bit high speed cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 9 ? package outline dimension 44-pin 400mil tsop- package outline dimension symbols dimensions in millmeters dimensions in mils min. nom. max. min. nom. max. a - - 1.20 - - 47.2 a1 0.05 0.10 0. 15 2.0 3.9 5.9 a2 0.95 1.00 1. 05 37.4 39.4 41.3 b 0.30 - 0.45 11.8 - 17.7 c 0.12 - 0.21 4.7 - 8.3 d 18.212 18.415 18.618 717 725 733 e 11.506 11.760 12.014 453 463 473 e1 9.957 10.160 10.363 392 400 408 e - 0.800 - - 31.5 - l 0.40 0.50 0. 60 15.7 19.7 23.6 zd - 0.805 - - 31.7 - y - - 0.076 - - 3 0 o 3 o 6 o 0 o 3 o 6 o
ly6125616 rev. 2.4 5v 256k x 16 bit high speed cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 10 ? 48-ball 6mm 8mm tfbga package outline dimension
ly6125616 rev. 2.4 5v 256k x 16 bit high speed cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 11 ? ordering information package type access time (speed)(ns) temperature range( ) packing type lyontek item no. 44pin(400mil) tsop-ii 10 0 ~70 tray ly6125616ml-10 tape reel ly6125616ml-10t -40 ~85 tray ly6125616ml-10i tape reel ly6125616ml-10it 15 0 ~70 tray ly6125616ml-15 ly6125616ml-15ll tape reel ly6125616ml-15t ly6125616ml-15llt -20 ~80 tray ly6125616ml-15e tape reel ly6125616ml-15et -40 ~85 tray ly6125616ml-15i ly6125616ml-15lli tape reel ly6125616ml-15it ly6125616ml-15llit 20 0 ~70 tray ly6125616ml-20 ly6125616ml-20ll tape reel ly6125616ml-20t ly6125616ml-20llt -20 ~80 tray ly6125616ml-20e tape reel ly6125616ml-20et -40 ~85 tray ly6125616ml-20i ly6125616ml-20lli tape reel ly6125616ml-20it ly6125616ml-20llit 25 0 ~70 tray ly6125616ml-25i ly6125616ml-25lli tape reel ly6125616ml-25it ly6125616ml-25llit -20 ~80 tray ly6125616ml-25e tape reel ly6125616ml-25et -40 ~85 tray ly6125616ml-25i ly6125616ml-25lli tape reel ly6125616ml-25it ly6125616ml-25llit
ly6125616 rev. 2.4 5v 256k x 16 bit high speed cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 12 ? package type access time (speed)(ns) temperature range( ) packing type lyontek item no. 48-ball(6mmx8mm) tfbga 10 0 ~70 tray ly6125616gl-10 tape reel ly6125616gl-10t -40 ~85 tray ly6125616gl-10i tape reel ly6125616gl-10it 15 0 ~70 tray ly6125616gl-15 ly6125616gl-15ll tape reel ly6125616gl-15t ly6125616gl-15llt -20 ~80 tray LY6125616GL-15E tape reel LY6125616GL-15Et -40 ~85 tray ly6125616gl-15i ly6125616gl-15lli tape reel ly6125616gl-15it ly6125616gl-15llit 20 0 ~70 tray ly6125616gl-20 ly6125616gl-20ll tape reel ly6125616gl-20t ly6125616gl-20llt -20 ~80 tray ly6125616gl-20e tape reel ly6125616gl-20et -40 ~85 tray ly6125616gl-20i ly6125616gl-20lli tape reel ly6125616gl-20it ly6125616gl-20llit 25 0 ~70 tray ly6125616gl-25 ly6125616gl-25ll tape reel ly6125616gl-25t ly6125616gl-25llt -20 ~80 tray ly6125616gl-25e tape reel ly6125616gl-25et -40 ~85 tray ly6125616gl-25i ly6125616gl-25lli tape reel ly6125616gl-25it ly6125616gl-25llit
ly6125616 rev. 2.4 5v 256k x 16 bit high speed cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 13 ? this page is left blank intentionally.

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